Schottky contacts to In2O3, APL Materials 2, 046104 (2014) doi: 10.1063/1.4870536

n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing... Ausführliche Beschreibung

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veröffentlicht: Leipzig Universitätsbibliothek Leipzig 2014
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