Copper Oxide ALD from a Cu(I) -Diketonate: Detailed Growth Studies on SiO2 and TaN, ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062

The atomic layer deposition (ALD) of copper oxide films from [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)] and wet oxygen on SiO<sub>2</sub> and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on... Ausführliche Beschreibung

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veröffentlicht: Universitätsbibliothek Chemnitz, 2009
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