Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison, AMC 2015 – Advanced Metallization Conference

Integration of dielectrics with increased porosity is required to reduce the capacitance of interconnects. However, the conventional dual damascene integration approach is causing negative effects to these materials avoiding their immediate implementation. A post-CMP curing approach could solve... Ausführliche Beschreibung

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veröffentlicht: Universitätsbibliothek Chemnitz, 2016
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CMP
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