Requirements and challenges on an alternative indirect integration regime of low-k materials, AMC 2015 – Advanced Metallization Conference

An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were... Ausführliche Beschreibung

1. Verfasser:
Weitere Verfasser: ;
Format: E-Artikel
veröffentlicht: Universitätsbibliothek Chemnitz, 2016
Gesamtaufnahme:
Schlagworte:
Kein Bild verfügbar
Gespeichert in: