%0 e Book %A Leu, Jihperng and Tu, H.E. and Chang, W.Y. and Chang, C.Y. and Chen, Y.C. and Chen, W.C. and Zhou, H.Y. %E Tu, H.E %E Chang, W.Y %E Chang, C.Y %E Chen, Y.C %E Chen, W.C %E Zhou, H.Y %I Technische Universität Chemnitz %C Chemnitz %D 2016 %G English %~ Katalog HGB Leipzig %T Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications %U https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-207243 %X Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages. %Z https://katalog.hgb-leipzig.de/Record/22-ch1-qucosa-207243 %U https://katalog.hgb-leipzig.de/Record/22-ch1-qucosa-207243